To address the need for better non-volatile memory, two emerging technologies have come to the forefront: Magneto-Resistive Random AccessMemory (MRAM) and Resistive Random AccessMemory ...
Computer Weekly Researchers at Japan’s Tokyo University of Science developed a binarized neural network (BNN) to allow for more efficient AI implementation in Internet of Things edge devices and other ...
Neuromorphic or brain-like computing systems offer several advantages for artificial intelligence applications. Resistive random-access memory (RRAM), a type of emerging semiconductor technology, ...
Researchers have developed a new binarized neural network (BNN) scheme using ternary gradients to address the computational challenges of IoT edge devices. They introduced a magnetic RAM-based ...